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Electrosynthesized NiS2 thin films and their optical and semiconductor studies

Authors Anand JS, Rajan RKM, Zaidan AAM

Received 22 April 2013

Accepted for publication 27 May 2013

Published 5 August 2013 Volume 2013:3 Pages 25—29

DOI https://doi.org/10.2147/RIE.S47068

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Video abstract presented by Rajes KM Rajan

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Joseph Sahaya Anand, Rajes KM Rajan, Abdul Aziz Mohd Zaidan

Department of Engineering Materials, Faculty of Manufacturing Engineering, Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, Malaysia

Abstract: Nickel sulfide thin films were prepared using electrodeposition on indium tin oxide-coated glass substrates. Films were characterized using X-ray diffraction for crystallographic analysis. The films were shown to be polycrystalline in nature with good uniformity. From scanning electron micrographs, the surface appeared to be comparatively granular with irregularly shaped grains. From optical analysis, the bandgap range was between 1.22 eV and 1.15 eV with an indirect bandgap nature. Mott-Schottky plot confirmed that the films were found to be n-type, and the semiconductor parameters of the film were derived.

Keywords: X-ray diffraction, scanning electron micrograph, optical studies, Mott-Schottky analysis

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