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Electrosynthesized NiS2 thin films and their optical and semiconductor studies
Authors Anand JS, Rajan RKM, Zaidan AAM
Received 22 April 2013
Accepted for publication 27 May 2013
Published 5 August 2013 Volume 2013:3 Pages 25—29
DOI https://doi.org/10.2147/RIE.S47068
Checked for plagiarism Yes
Review by Single anonymous peer review
Peer reviewer comments 3
Video abstract presented by Rajes KM Rajan
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Joseph Sahaya Anand, Rajes KM Rajan, Abdul Aziz Mohd Zaidan
Department of Engineering Materials, Faculty of Manufacturing Engineering, Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, Malaysia
Abstract: Nickel sulfide thin films were prepared using electrodeposition on indium tin oxide-coated glass substrates. Films were characterized using X-ray diffraction for crystallographic analysis. The films were shown to be polycrystalline in nature with good uniformity. From scanning electron micrographs, the surface appeared to be comparatively granular with irregularly shaped grains. From optical analysis, the bandgap range was between 1.22 eV and 1.15 eV with an indirect bandgap nature. Mott-Schottky plot confirmed that the films were found to be n-type, and the semiconductor parameters of the film were derived.
Keywords: X-ray diffraction, scanning electron micrograph, optical studies, Mott-Schottky analysis
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