Back to Journals » Nanotechnology, Science and Applications » Volume 4

Power optimized variation aware dual-threshold SRAM cell design technique

Authors Islam A, Mohd. Hasan

Published 10 February 2011 Volume 2011:4 Pages 25—33

DOI https://doi.org/10.2147/NSA.S15719

Review by Single-blind

Peer reviewer comments 4


Aminul Islam1, Mohd Hasan2
1Department of Electronics and Communication Engineering, Birla Institute of Technology, Mesra, Ranchi, Jharkhand, India; 2Department of Electronics Engineering, Aligarh Muslim University, Aligarh, Uttar Pradesh, India

Abstract: Bulk complementary metal-oxide semiconductor (CMOS) technology is facing enormous challenges at channel lengths below 45 nm, such as gate tunneling, device mismatch, random dopant fluctuations, and mobility degradation. Although multiple gate transistors and strained silicon devices overcome some of the bulk CMOS problems, it is sensible to look for revolutionary new materials and devices to replace silicon. It is obvious that future technology materials should exhibit higher mobility, better channel electrostatics, scalability, and robustness against process variations. Carbon nanotube-based technology is very promising because it has most of these desired features. There is a need to explore the potential of this emerging technology by designing circuits based on this technology and comparing their performance with that of existing bulk CMOS technology. In this paper, we propose a low-power variation-immune dual-threshold voltage carbon nanotube field effect transistor (CNFET)-based seven-transistor (7T) static random access memory (SRAM) cell. The proposed CNFET-based 7T SRAM cell offers ~1.2× improvement in standby power, ~1.3× improvement in read delay, and ~1.1× improvement in write delay. It offers narrower spread in write access time (1.4× at optimum energy point [OEP] and 1.2× at 1 V). It features 56.3% improvement in static noise margin and 40% improvement in read static noise margin. All the simulation measurements are taken at proposed OEP decided by the optimum results obtained after extensive simulation on HSPICE (high-performance simulation program with integrated circuit emphasis) environment.

Keywords: carbon nanotube field effect transistor (CNFET), chirality vector, random dopant fluctuation (RDF), SNM

Creative Commons License This work is published and licensed by Dove Medical Press Limited. The full terms of this license are available at https://www.dovepress.com/terms.php and incorporate the Creative Commons Attribution - Non Commercial (unported, v3.0) License. By accessing the work you hereby accept the Terms. Non-commercial uses of the work are permitted without any further permission from Dove Medical Press Limited, provided the work is properly attributed. For permission for commercial use of this work, please see paragraphs 4.2 and 5 of our Terms.

Download Article [PDF]  View Full Text [HTML][Machine readable]