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Hysteresis modeling in ballistic carbon nanotube field-effect transistors

Authors Liu Y, Moura M, Costa A, de Almeida LA, Paranjape M, Fontana M

Received 21 November 2013

Accepted for publication 13 January 2014

Published 8 July 2014 Volume 2014:7 Pages 55—61

DOI https://doi.org/10.2147/NSA.S58003

Checked for plagiarism Yes

Review by Single anonymous peer review

Peer reviewer comments 2


Yian Liu,1 Mateus S Moura,2 Ademir J Costa,2,3 Luiz Alberto L de Almeida,4 Makarand Paranjape,1 Marcio Fontana2

1Department of Physics, Georgetown University, Washington, DC, USA; 2Department of Electrical Engineering, Federal University of Bahia, Salvador, Brazil; 3Federal Institute of Bahia, Santo Amaro, Brazil; 4Engineering, Modeling and Applied Social Sciences Center, Federal University of ABC, Santo André, Brazil

Abstract: Theoretical models are adapted to describe the hysteresis effects seen in the electrical characteristics of carbon nanotube field-effect transistors. The ballistic transport model describes the contributions of conduction energy sub-bands over carbon nanotube field-effect transistor drain current as a function of drain-source and gate-source voltages as well as other physical parameters of the device. The limiting-loop proximity model, originally developed to understand magnetic hysteresis, is also utilized in this work. The curves obtained from our developed model corroborate well with the experimentally derived hysteretic behavior of the transistors. Modeling the hysteresis behavior will enable designers to reliably use these effects in both analog and memory applications.

Keywords: ballistic transport, nanoscale device, solid-state device

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